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document number: 94630 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 add-a-pak generation vii power modules thyristor/diode and thyristor/thyristor, 45 a/60 a vsk.41.., vsk.56.. series vishay semiconductors mechanical description the add-a-pak generation vii, new generation of add-a-pak module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplif ied internal structure with minimized number of interfaces. features ? high voltage ? industrial standard package ? low thermal resistance ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? excellent thermal performances obtained by the usage of exposed direct bonded copper substrate ? up to 1600 v ? high surge capability ? easy mounting on heatsink electrical description these modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, ups and battery charger. product summary i t(av) or i f(av) 45 a/60 a add-a-pak major ratings and characteristics symbol characteristics vsk.41 vsk.56 units i t(av) or i f(av) 85 c 45 60 a i o(rms) as ac switch 100 135 i tsm, i fsm 50 hz 850 1200 60 hz 890 1256 i 2 t 50 hz 3.61 7.20 ka 2 s 60 hz 3.30 6.57 i 2 t 36.1 72 ka 2 s v rrm range 400 to 1600 v t stg - 40 to 125 c t j
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94630 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-may-10 vsk.41.., vsk.56.. series vishay semiconductors add-a-pak generation vii power modules thyristor/diode and thyristo r/thyristor, 45 a/60 a electrical specifications notes (1) i 2 t for time t x = i 2 t x t x (2) average power = v t(to) x i t(av) + r t x (i t(rms) ) 2 (3) 16.7 % x x i av < i < x i av (4) i > x i av voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v v drm , maximum repetitive peak off-state voltage, gate open circuit v i rrm, i drm at 125 c ma vsk.41 vsk.56 04 400 500 400 15 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 on-state conduction parameter symbol test condi tions vsk.41 vsk.56 units maximum average on-state current (thyristors) i t(av) 180 conduction, half sine wave, t c = 85 c 45 60 a maximum average forward current (diodes) i f(av) maximum continuous rms on-state current, as ac switch i o(rms) 100 135 maximum peak, one-cycle non-repetitive on-state or fo rward current i tsm or i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 850 1200 t = 8.3 ms 890 1256 t = 10 ms 100 % v rrm reapplied 715 1000 t = 8.3 ms 750 1056 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied initial t j = t j maximum 3.61 7.20 ka 2 s t = 8.3 ms 3.30 6.57 t = 10 ms 100 % v rrm reapplied 2.56 5.10 t = 8.3 ms 2.33 4.56 maximum i 2 t for fusing i 2 t (1) t = 0.1 ms to 10 ms, no voltage reapplied t j = t j maximum 36.1 72 ka 2 s maximum value or threshold voltage v t(to) (2) low level (3) t j = t j maximum 1.08 0.91 v high level (4) 1.12 1.02 maximum value of on-state slope resistance r t (2) low level (3) t j = t j maximum 4.7 4.27 m high level (4) 4.5 3.77 maximum peak on-state or forward voltage v tm i tm = x i t(av) t j = 25 c 1.81 1.7 v v fm i fm = x i f(av) maximum non-repetitive rate of rise of turned on current di/dt t j = 25 c, from 0.67 v drm , i tm = x i t(av) , i g = 500 ma, t r < 0.5 s, t p > 6 s 150 a/s maximum holding current i h t j = 25 c, anode supply = 6 v, resistive load, gate open circuit 200 ma maximum latching current i l t j = 25 c, anode supply = 6 v, resistive load 400 400 or i (rms) i (rms)
document number: 94630 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vsk.41.., vsk.56.. series add-a-pak generation vii power modules thyristor/diode and thyristo r/thyristor, 45 a/60 a vishay semiconductors note ? table shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc triggering parameter symbol test conditions vsk.41 vsk.56 units maximum peak gate power p gm 10 w maximum average gate power p g(av) 2.5 maximum peak gate current i gm 2.5 a maximum peak negative gate voltage - v gm 10 v maximum gate voltage required to trigger v gt t j = - 40 c anode supply = 6 v resistive load 4.0 t j = 25 c 2.5 t j = 125 c 1.7 maximum gate current required to trigger i gt t j = - 40 c anode supply = 6 v resistive load 270 ma t j = 25 c 150 t j = 125 c 80 maximum gate voltage th at will not trigger v gd t j = 125 c, rated v drm applied 0.25 v maximum gate current th at will not trigger i gd t j = 125 c, rated v drm applied 6 ma blocking parameter symbol test conditions vsk.41 vsk.56 units maximum peak reverse and off-state leakage current at v rrm , v drm i rrm, i drm t j = 125 c, gate open circuit 15 ma maximum rms insulation voltage v ins 50 hz 3000 (1 min) 3600 (1 s) v maximum critical rate of rise of off-state voltage dv/dt t j = 125 c, linear to 0.67 v drm 1000 v/s thermal and mechanical specifications parameter symbol test conditions vsk.41 vsk.56 units junction operating and storage temperature range t j , t stg - 40 to 125 c maximum internal thermal resistance, junction to case per leg r thjc dc operation 0.44 0.35 c/w typical thermal resistance, case to heatsink per module r thcs mounting surface flat, smooth and greased 0.1 mounting torque 10 % to heatsink a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 4 nm busbar 3 approximate weight 75 g 2.7 oz. case style jedec to-240aa compatible r conduction per junction devices sine half wave conduction rectangular wave conduction units 180 120 90 60 30 180 120 90 60 30 vsk.41.. 0.110 0.131 0.17 0.23 0.342 0.085 0.138 0.177 0.235 0.345 c/w vsk.56.. 0.088 0.104 0.134 0.184 0.273 0.07 0.111 0.143 0.189 0.275
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94630 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-may-10 vsk.41.., vsk.56.. series vishay semiconductors add-a-pak generation vii power modules thyristor/diode and thyristo r/thyristor, 45 a/60 a fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics fig. 4 - on-state po wer loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current average on-state current (a) maximum allowable case temperature (c) 0 1020304050 80 90 100 110 120 130 180 120 90 60 30 vsk.41 series rthjc (dc) = 0.44c/w 0 1020304050607080 70 80 90 100 110 120 130 180 120 90 60 30 dc vsk.41 series rthjc (dc) = 0.44 c/w average on-state current (a) maximum allowable case temperature (c) average on-state current (a) maximum average on-state power loss (w) 0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70 80 180 120 90 60 30 rms limit vsk.41 series per leg, tj = 125c average on-state current (a) maximum average on-state power loss (w) 0 1020304050607080 0 20 40 60 80 100 120 180 120 90 60 30 rms limit dc vsk.41 series per leg, tj = 125c peak half sine wave on-state current (a) number of equal amplitude half cycle current pulses (n) 110100 300 400 500 600 700 800 at any rated load condition and with rated vrrm applied following surge initial tj = tj max @ 60 hz 0.0083 s @ 50 hz 0.0100s per leg peak half sine wave on-state current (a) pulse train duration (s) 0.01 0.1 1 300 400 500 600 700 800 900 maximum non-repetitive surge current versus pulse train duration. control of conduction may not be maintaned. initial tj = 125c no voltage reapplied rated vrrm reapplied per leg
document number: 94630 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vsk.41.., vsk.56.. series add-a-pak generation vii power modules thyristor/diode and thyristo r/thyristor, 45 a/60 a vishay semiconductors fig. 7 - on-state power loss characteristics fig. 8 - on-state power loss characteristics fig. 9 - on-state power loss characteristics total rms output current (a) maximum total on-state power loss (w) maximum allowable ambient temperature (c) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.3 c/w 0.5 c/w 0.7 c/w 1 c/w 1.5 c/w 2 c/w 3 c/w 5 c/w 0 20406080100 0 20 40 60 80 100 120 140 160 180 120 90 60 30 vsk.41 series per module tj = 125c total output current (a) maximum total power loss (w) maximum allowable ambient temperature (c) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.2 c/w 0.3 c/w 0.5 c/w 0.7 c/w 1 c/w 1.5 c/w 020406080100 0 50 100 150 200 250 300 350 180 (sine) 180 (rect) 2 x vsk.41 series single phase bridge connected tj = 125c total output current (a) maximum allowable ambient temperature (c) maximum total power loss (w) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.2 c/w 0.3 c/w 0.5 c/w 0.7 c/w 1 c/w 0 20406080100120140 0 100 200 300 400 500 120 (rect) 3 x vsk.41 series three phase bridge connected tj = 125c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94630 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-may-10 vsk.41.., vsk.56.. series vishay semiconductors add-a-pak generation vii power modules thyristor/diode and thyristo r/thyristor, 45 a/60 a fig. 10 - current ratings characteristics fig. 11 - current ratings characteristics fig. 12 - on-state po wer loss characteristics fig. 13 - on-state powe r loss characteristics fig. 14 - maximum non-re petitive surge current fig. 15 - maximum non-re petitive surge current average on-state current (a) maximum allowable case temperature (c) 0 10203040506070 80 90 100 110 120 130 180 120 90 60 30 vsk.56 series rthjc (dc) = 0.35c/w 0 20406080100 70 80 90 100 110 120 130 180 120 90 60 30 dc vsk.56 series rthjc (dc) = 0.35 c/w average on-state current (a) maximum allowable case temperature (c) average on-state current (a) maximum average on-state power loss (w) 0 10203040506070 0 20 40 60 80 100 180 120 90 60 30 rms limit vsk.56 series per leg, tj = 125c average on-state current (a) maximum average on-state power loss (w) 0 20 40 60 80 100 0 20 40 60 80 100 120 140 180 120 90 60 30 rms limit vsk.56 series per leg, tj = 125c dc peak half sine wave on-state current (a) number of equal amplitude half cycle current pulses (n) 110100 400 500 600 700 800 900 1000 1100 at any rated load condition and with rated vrrm applied following surge initial tj = tj max @ 60 hz 0.0083 s @ 50 hz 0.0100s per leg peak half sine wave on-state current (a) pulse train duration (s) 0.01 0.1 1 400 500 600 700 800 900 1000 1100 1200 1300 maximum non-repetitive surge current versus pulse train duration. control of conduction may not be maintained. initial tj = 125c no voltage reapplied rated vrrm reapplied per leg
document number: 94630 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 vsk.41.., vsk.56.. series add-a-pak generation vii power modules thyristor/diode and thyristo r/thyristor, 45 a/60 a vishay semiconductors fig. 16 - on-state po wer loss characteristics fig. 17 - on-state po wer loss characteristics fig. 18 - on-state po wer loss characteristics total rms output current (a) maximum total on-state power loss (w) maximum allowable ambient temperature (c) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.2 c/w 0.3 c/w 0.4 c/w 0.5 c/w 0.7 c/w 1 c/w 1.5 c/w 2 c/w 4 c/w 020406080100120140 0 50 100 150 200 250 180 120 90 60 30 vsk.56 series per module tj = 125c total output current (a) maximum total power loss (w) maximum allowable ambient temperature (c) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.2 c/w 0.3 c/w 0.5 c/w 0.7 c/w 1 c/w 2 c/w 0 20406080100120140 0 100 200 300 400 500 600 180 (sine) 180 (rect) 2 x vsk.56 series single phase bridge connected tj = 125c total output current (a) maximum allowable ambient temperature (c) maximum total power loss (w) 0 20 40 60 80 100 120 140 rthsa = 0.1 c/w 0.2 c/w 0.3 c/w 0.5 c/w 0.7 c/w 1 c/w 0 20406080100120140160180 0 100 200 300 400 500 600 700 120 (rect) 3 x vsk.56 series three phase bridge connected tj = 125c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94630 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-may-10 vsk.41.., vsk.56.. series vishay semiconductors add-a-pak generation vii power modules thyristor/diode and thyristo r/thyristor, 45 a/60 a fig. 19 - on-state voltage drop characteristics fig. 20 - on-state voltage drop characteristics fig. 21 - thermal impedance z thjc characteristics fig. 22 - gate characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 1000 tj = 25c tj = 125c vsk. 41 series per leg instantaneous on-state voltage (v) instantaneous on-state current (a) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 1000 tj = 25c tj = 125c vsk. 56 series per leg square wave pulse duration (s) transient thermal impedance z thjc (c/w) 0.001 0.01 0.1 1 10 0.01 0.1 1 steady state value rthjc = 0.44 c/w rthjc = 0.35 c/w (dc operation) per leg vsk.41 series vsk.56 series 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 (b) (a) rectangular gate pulse (4) (3) (2) (1) (1) pgm = 100 w, t p = 500 s (2) pgm = 50 w, t p = 1 ms (3) pgm = 20 w, t p = 25 ms (4) pgm = 10 w, t p = 5 ms tj = - 4 0 c tj = 2 5 c t j = 125 c a)recommended load line for b)rec ommended loa d line for vgd igd fr e q u e n c y li m i t e d b y pg ( a v ) rated di/dt: 20 v, 30 ohms tr = 0.5 s, t p >= 6 s <= 30% ra ted d i/ dt : 20 v, 65 ohm s tr = 1 s, tp >= 6 s irk.41../ .56.. se rie s instantaneous gate voltage (v) instantaneous gate current (a) vsk.
document number: 94630 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-may-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 9 vsk.41.., vsk.56.. series add-a-pak generation vii power modules thyristor/diode and thyristo r/thyristor, 45 a/60 a vishay semiconductors ordering information table note ? to order the optional hardware go to www.vishay.com/doc?95172 circuit configuration links to related documents dimensions www.vishay.com/doc?95368 1 - module type 2 - circuit configuration (see end of datasheet) 3 - current code 4 - voltage code (see voltage ratings table) device code 13 24 vsk t 56 / 16 41 = 45 a 56 = 60 a + - k1 (5) k2 (7) g2 (6) g1 (4) ~ (1) (2) (3) + - k2 (7) g2 (6) ~ (1) (2) (3) + - k1 (5) g1 (4) ~ (1) (2) (3) + + k1 (5) g1 (4) - (1) (2) (3) vskt 1 2 3 4 5 7 6 vskl 1 2 3 7 6 vskh 1 2 3 4 5 vskn 1 2 3 4 5
document number: 95368 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 11-nov-08 1 add-a-pak generation vii - thyristor outline dimensions vishay semiconductors dimensions in millimeters (inches) 35 ref. 30 0.5 (1.18 0.020) 29 0.5 (1 0.020) viti m5 x 0.8 screws m5 x 0.8 18 (0.7) ref. 15.5 0.5 (0.6 0.020) fast-on tab 2.8 x 0.8 (0.110 x 0.03) 6.7 0.3 (0.26 0.012) 30 1 (1.18 0.039) 24 0.5 (1 0.020) 1 2 3 4 5 7 6 80 0.3 (3.15 0.012) 92 0.75 (3.6 0.030) 20 0.5 (0.79 0.020) 20 0.5 (0.79 0.020) 15 0.5 (0.59 0.020) 22.6 0.2 (0.89 0.008) 6.3 0.2 (0.248 0.008) 5.8 0.25 (0.228 0.010) 4 0.2 (0.157 0.008)
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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